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We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1−xO3−δ=Sið001Þ interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Theoretical analysis of core-level spectra enables built-in fields and the resulting band bending to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.more » « less
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Lim, Z. H. ; Quackenbush, N. F. ; Penn, A. N. ; Chrysler, M. ; Bowden, M. ; Zhu, Z. ; Ablett, J. M. ; Lee, T. -L. ; LeBeau, J. M. ; Woicik, J. C. ; et al ( , Physical Review Letters)
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Chirayath, V. A. ; Gladen, R. W. ; McDonald, A. D. ; Fairchild, A. J. ; Joglekar, P. V. ; Satyal, S. ; Lim, Z. H. ; Shead, T. N. ; Chrysler, M. D. ; Mukherjee, S. ; et al ( , Review of Scientific Instruments)
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Lim, Z. H. ; Ahmadi-Majlan, K. ; Grimley, E. D. ; Du, Y. ; Bowden, M. ; Moghadam, R. ; LeBeau, J. M. ; Chambers, S. A. ; Ngai, J. H. ( , Journal of Applied Physics)